Crystal IS, a subsidiary of Asahi Kasei, announced the launch of mass production for their advanced 100 mm diameter single-crystal aluminum nitride (AlN) substrates, achieving a notable 99% usable area. This milestone marks a significant step forward in meeting the needs of UVC LED applications and will be produced in the United States. The unique characteristics of AlN, such as its ultra-wide bandgap and superior thermal conductivity, enhance device reliability and performance, benefiting a range of technologies including UVC LEDs, RF, and power devices.
Eoin Connolly, President and CEO of Crystal IS, highlighted the continuous improvements in substrate quality over the last nine months, demonstrating the capabilities of their Crystal Growth team. He emphasized the thermal benefits of AlN, which are critical in developing high-performing RF and power devices for telecom and mission-critical applications. Connolly expressed excitement about further collaborations to advance this material technology.
This achievement follows Crystal IS's announcement in August 2023 about the development of the first 100 mm diameter substrate, which won the Grand Prize in the Electronic Materials for Semiconductors category at the 2024 Semiconductor of the Year Awards. The event, hosted by the renowned Tokyo-based Electronic Device Industry News, celebrates significant technological advancements in the semiconductor industry.
Located in New York, Crystal IS has been pivotal in expanding the application of AlN substrates from the standard 2-inch sizes used in research to the current 100 mm substrates, facilitating integration into existing production lines and spurring the development of next-generation devices. Plans are underway to supply these substrates, solely manufactured in the US, to major partners within the year.
Asahi Kasei continues to evolve, adapting its offerings to meet the changing demands of various industries, thus enhancing global quality of life and reinforcing its role as a leader in diversified sectors.
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